YANSEN PCIe 4.0 2280 | Industrial M.2 NVMe PCIE SSD
Category M.2 PCIe
- Interface: PICe Gen4 x 4
- Capacity: 256GB-4TB
- NAND: eTLC
- Read: Up to 7000~7400 MB/s
- Write: Up to 2400~6500 MB/s
- Operating Temperature: -20℃~75℃, -40℃~85℃, 0℃~70℃
- Additional Features:
- Quick Erase: Yes
- TLC Direct Writing: Yes
- Power Loss Protection (PLP): Yes
- Yansen PCIe 4.0 2280 SSD is an industrial-grade M.2 NVMe pcie SSD designed for demanding environments. As an industrial solid state drive optimized for industrial applications, it delivers leading-edge performance and reliability where traditional HDDs simply cannot compete.
- Leveraging a PCIe Gen4 interface, our m.2 NVMe PCIe SSDs achieve speeds over 10x faster than SATA alternatives, with read/write speeds up to 7400/6500 MB/s. Such lightning-fast throughput is essential for efficiently processing real-time sensor data, video analytics, and other intensive industrial workload. Meanwhile, its up to 4TB capacity in a eTLC configuration ensures ample storage headroom for capturing and retaining valuable operational data over extended periods.
- Where extreme operating conditions would damage consumer-grade drives, the Yansen PCIe 4.0 2280 SSD proves itself as a rugged industrial NVMe SSD. Qualified from -40°C to 85°C, it can withstand temperature swings that would quickly destroy lesser solid state drives. Additional protections like full data path ECC correction further guarantee zero data corruption under shock, vibration, or power fluctuations common in plant environments.
- Simple to deploy via its M.2 form factor, the Yansen PCIe 4.0 2280 SSD integrates seamlessly into computers, servers, and embedded systems controlling manufacturing equipment, infrastructure, and more. Removing concerns about storage reliability in harsh settings, it allows users to focus on productivity instead of maintenance.
Order Information
| Model | FLASH Type | Capacity | Sequential Read | Sequential Write | TBW/DWPD |
| YSNN5M7XT | TLC | 256GB~4TB | Up to 7400MB/S | Up to 6500MB/S | TBW: 500~4000TB |
| YSNN5T1KE | eTLC | 400GB~3.84TB | Up to 7000MB/S | Up to 2400MB/S | DWPD: 1 OR 3 |
| Model | YSNN5M7XX256XNNEN | YSNN5M7XX512XNNEN | YSNN5M7XX01TXNNEN | YSNN5M7XX02TXNNEN | YSNN5M7XX04TXNNEN | YSNN5T1KEXXXEPNNA |
| Dimensions | M.2 2280 L80.0mm * W22.0mm * H2.1mm Error±0.15mm | |||||
| Form factor | M.2 M Key | |||||
| Interface | PICe Gen4 x 4Lane,NVME 1.3 | |||||
| Capacity | 256GB | 512GB | 1TB | 2TB | 4TB | 400GB~3.84TB |
| NAND Flash | 3D NAND | 3D NAND | 3D NAND | 3D NAND | 3D NAND | 3D eTLC |
| Sequential Read (MB/s) | Up to 7400MB/S | Up to 7000MB/S | ||||
| Sequential Write (MB/s) | Up to 6500MB/S | Up to 2400MB/S | ||||
| TBW/DWPD | TBW: 500~4000TB | DWPD: 1 or 3 | ||||
| 4K Random read(IOPS) | 710K | 880K | ||||
| 4K Random write(IOPS) | 670K | 95K | ||||
| Input voltage | DC 3.3V±5% | |||||
| Power consumption (MAX) | 4.56W | 8W | ||||
| MTBF | 2 million hours | |||||
| Features | Power management/TRIM/S.M.A.R.T./NCQ/Wear-leveling | |||||
| Operating Temp. | -20℃~75℃, -40℃~85℃, 0℃~70℃ | 0℃~70℃ | ||||
| Storage Temp. | -55℃~105℃ | -40℃~85℃ | ||||
| Humidity | 5-95% | |||||
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