YS44H6-XXXS
- Interface: ATAPI-7
- Capacity: 8-32GB
- NAND: SLC
- Read: Up to 90~110 MB/s
- Write: Up to 60~95 MB/s
- Operating Temperature: 0℃～70℃
Technology
- YS44H6-XXXS is a high performance and high reliability storage device which consists nonvolatile NAND Flash memories and semiconductor components. This technology is designed to optimize the limitations of low computing performance of traditional hard disk drives. All mechanical parts have been replaced with electronic components to prevent shock and vibration damages.
| Model | Flash | Capacity | Sequential Read | Sequential Write | TBW |
| YS44H6-8S | SLC | 8GB | 90~100MB/S | 60~75MB/S | 355TB |
| YS44H6-16S | SLC | 16GB | 100~110MB/S | 70~85MB/S | 710TB |
| YS44H6-32S | SLC | 32GB | 100~110MB/S | 80~95MB/S | 1420TB |
| Model | YS44H6-XXXS | ||
| Dimensions | L48.0mm * W32.0mm * H4.0mm Error±0.5mm | ||
| Form factor | 44Pin IDE | ||
| Interface | ATA/ATAPI-7 | ||
| Capacity | 8GB | 16GB | 32GB |
| NAND Flash | SLC | SLC | SLC |
| Sequential Read (MB/s) | 90~100 | 100~110 | 100~110 |
| Sequential Write (MB/s) | 60~75 | ~70 85 | 80~95 |
| TBW | 355TB | 710TB | 1420TB |
| 4K Random read(IOPS) | 3000(32GB) | ||
| 4K Random write(IOPS) | 610(32GB) | ||
| Input voltage | DC 3.3V±5% | ||
| Power consumption Idle | 0.44W(32GB) | ||
| Power consumption Active | 1.20W(32GB) | ||
| Data retention | 10years below 25 degree | ||
| MTBF | 2 million hours | ||
| ECC | Hardware BCH ECC capable of correcting errors up to 72bit/1KB | ||
| Features | Power management/TRIM/S.M.A.R.T./NCQ/Wear-leveling | ||
| Operating Temp. | 0℃~70℃ | ||
| Storage Temp. | -40℃~85℃ | ||
| Humidity | 5-95% | ||
| Vibration | 80Hz~2000Hz/20G | ||
| Shock | 1500G/0.5ms | ||
- Specification – Download
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